A MESFET Model for Use in the Design of GaAs Integrated Circuits
- 1 May 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 28 (5) , 448-456
- https://doi.org/10.1109/tmtt.1980.1130099
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- A Practical AC Large-Signal Model for GaAs Microwave MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Quasi-Static Approach to Simulating Nonlinear GaAs FET BehaviorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Physical basis of short-channel MESFET operationIEEE Transactions on Electron Devices, 1979
- Determination of the Basic Device Parameters of a GaAs MESFETBell System Technical Journal, 1979
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978
- Analysis of the properties of three-terminal transferred-electron logic devicesIEEE Transactions on Electron Devices, 1977
- Two-dimensional numerical analysis of stability criteria of GaAs FET'sIEEE Transactions on Electron Devices, 1976
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Graphical design and iterative analysis of the DC parameters of GaAs FET'sIEEE Transactions on Electron Devices, 1974
- Modeling and simulation of insulated-gate field-effect transistor switching circuitsIEEE Journal of Solid-State Circuits, 1968