Temperature dependence of the sputtered ejection pattern from Ge [100
- 19 May 1969
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 29 (5) , 256-257
- https://doi.org/10.1016/0375-9601(69)90368-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Sputtering Pattern Distortions on Plane and Cylindrical Collectors Deposit Structure of Aluminium Pattern between 100 and 560°KPhilosophical Magazine, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Temperature Dependence of Ejection Patterns in Ge SputteringJournal of Applied Physics, 1963
- Sputtering Experiments with 1- to 5-keV Ar+ IonsJournal of Applied Physics, 1963
- Atom Ejection Patterns in Single-Crystal SputteringJournal of Applied Physics, 1960
- Damage to Silicon Produced by Bombardment with Helium IonsJournal of Applied Physics, 1957