Ion-beam-induced epitaxial crystallization of Si due to diffusion of point defects from crystalline and amorphous regions to the interphase boundary
- 16 February 1994
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 141 (2) , 305-310
- https://doi.org/10.1002/pssa.2211410207
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ion-beam-induced epitaxial crystallization and amorphization in siliconMaterials Science Reports, 1990
- A defect model for ion-induced crystallization and amorphizationJournal of Materials Research, 1988
- Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperaturePhysical Review B, 1987
- Channeling dependence of ion-beam-induced epitaxial recrystallization in siliconJournal of Applied Physics, 1986
- Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous SiliconPhysical Review Letters, 1985
- Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy depositionPhysical Review B, 1985
- Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphirePhysical Review B, 1984
- Effect of irradiation particle mass on crystallization of amorphous alloysJournal of Materials Science, 1984
- Epitaxial Crystallisation of Doped Amorphous SiliconMRS Proceedings, 1983
- High dose effects in ion implantationRadiation Effects, 1976