Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD
- 1 April 1999
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 142 (1) , 400-406
- https://doi.org/10.1016/s0169-4332(98)00683-7
Abstract
No abstract availableKeywords
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