Modeling the I-V characteristics of fully depleted submicrometer SOI MOSFET's
- 1 February 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (2) , 45-47
- https://doi.org/10.1109/55.285378
Abstract
In this paper, an analytic current-voltage model for submicrometer fully-depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the source/drain series resistances which can be especially high in thin film SOI devices. The effect of drain induced conductivity enhancement is also included, which is important for submicrometer channels. The model is verified by comparison to measured SOI I-V characteristics. Good agreement is obtained for SOI film thicknesses ranging from 40 to 220 nm and effective channel lengths down to 0.25 /spl mu/m.Keywords
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