Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4) , 35-39
- https://doi.org/10.1016/0169-4332(93)90060-o
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Near-Brewster ellipsometric determination of refractive indices for submonolayer adsorbates: application to antimony on silicon (111)Surface Science, 1991
- Geometric and electronic structure of Sb on Si(111) by scanning tunneling microscopyPhysical Review B, 1991
- Determination of the Sb/Si(111) interfacial structure by back-reflection x-ray standing waves and surface extended x-ray-absorption fine structurePhysical Review B, 1991
- Growth mode of Bi and Sb layers on GaAs(110) and InP(110)Surface Science, 1991
- Vibrational properties of arsenic on Si(111)Surface Science, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Evidence for trimer reconstruction of Si(111) √3 × √3 -Sb: Scanning tunneling microscopy and first-principles theoryPhysical Review B, 1990
- Antimony adsorption on silicon (111) analyzed in real time by in situ ellipsometrySurface Science, 1989
- Growth and characterization of a delta-function doping layer in SiApplied Physics Letters, 1987
- Sb overlayers on GaAs(110)Surface Science, 1986