Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Thermal and Electrical Properties of Heavily Doped Ge-Si Alloys up to 1300°KJournal of Applied Physics, 1964