Pulse-time-modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch-free polycrystalline silicon patterning
- 20 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (25) , 3398-3400
- https://doi.org/10.1063/1.111290
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma SourceJapanese Journal of Applied Physics, 1992
- Low radio frequency biased electron cyclotron resonance plasma etchingApplied Physics Letters, 1991
- Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline siliconApplied Physics Letters, 1990
- Interaction of Amplitude Modulated Microwave with Highly Ionized Magneto-PlasmaJapanese Journal of Applied Physics, 1975