Optimally Stable Electron Cyclotron Resonance Plasma Generation and Essential Points for Compact Plasma Source
- 1 December 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (12S)
- https://doi.org/10.1143/jjap.31.4348
Abstract
This study examines the strong dependence of electron cyclotron resonance (ECR) plasma generation on the microwave conditions and the magnetic field profiles in the ECR plasma. When an introduced microwave frequency oscillates and has a large ripple, the ECR plasma around the ECR region vibrates and regularly turns on and off. The microwave oscillation and the microwave ripple must be eliminated to prevent poor etching anisotropy. Moreover, the nonuniform plasma causes disturbed ion motions due to magnetohydrodynamic (MHD) plasma instability. It is found that uniform and high-density ECR plasma is generated by optimizing the waveguide, the location of the ECR region and the magnetic field profiles for precise ULSI patterning. Based on these results, we determine the essential features for realizing a compact ECR plasma source.Keywords
This publication has 10 references indexed in Scilit:
- Compact Electron Cyclotron Resonance Plasma-Etching Reactor Employing Permanent MagnetJapanese Journal of Applied Physics, 1991
- Dependence of Electron Cyclotron Resonance Plasma Characteristics on Magnetic Field ProfilesJapanese Journal of Applied Physics, 1991
- Ion Current Density and Ion Energy Distributions at the Electron Cyclotron Resonance Position in the Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1991
- Characterization of a permanent magnet electron cyclotron resonance plasma sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Ion current density and its uniformity at the electron cyclotron resonance position in electron cyclotron resonance plasmaJournal of Vacuum Science & Technology A, 1991
- Extremely high selective, highly anisotropic, and high rate electron cyclotron resonance plasma etching for n+ poly-Si at the electron cyclotron resonance positionJournal of Vacuum Science & Technology B, 1990
- Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline siliconApplied Physics Letters, 1990
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Microwave Plasma EtchingJapanese Journal of Applied Physics, 1977
- Gyroresonant particle acceleration in a non-uniform magnetostatic fieldNuclear Fusion, 1969