Ambient and low temperature photoluminescence topography of GaAs subtrates, epitaxial and implanted layers
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1-4) , 228-232
- https://doi.org/10.1016/0169-4332(91)90170-o
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Spatial distribution of residual shallow acceptors in undoped semi-insulating GaAsJournal of Applied Physics, 1989
- Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-WafersJapanese Journal of Applied Physics, 1989
- Computer-Controlled Mapping of Photoluminescence IntensitiesJapanese Journal of Applied Physics, 1984