Energy levels of interstitial manganese in silicon
- 31 July 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (4) , 223-226
- https://doi.org/10.1016/0038-1098(83)90549-5
Abstract
No abstract availableKeywords
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- Properties of Silicon Doped with ManganesePhysical Review B, 1956