Strain relief via trench formation in Ge/Si(100) islands
- 12 June 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (24) , 3534-3536
- https://doi.org/10.1063/1.126698
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Evolution of Ge/Si(100) islands: Island size and temperature dependenceJournal of Applied Physics, 2000
- Strain relaxation by alloying effects in Ge islands grown on Si(001)Physical Review B, 1999
- Strain-Driven Alloying in Ge/Si(100) Coherent IslandsPhysical Review Letters, 1999
- Evolution of Ge islands on Si(001) during annealingJournal of Applied Physics, 1999
- Annealing of Ge nanocrystals on Si(001) at: Metastability of huts and the stability of pyramids and domesPhysical Review B, 1998
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- SiGe Coherent Islanding and Stress Relaxation in the High Mobility RegimePhysical Review Letters, 1997
- Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressuresJournal of Applied Physics, 1997
- STM study of the Ge growth mode on Si(001) substratesApplied Surface Science, 1994
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990