Metrology-chip for measurement of diameter and astigmatism of an electron beam with nm resolution using moiré amplification
- 1 January 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 23 (1-4) , 387-390
- https://doi.org/10.1016/0167-9317(94)90179-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Evaluation of Moiré patterns obtained by the “self-comparison-method” to characterize particle beam lithography systemsMicroelectronic Engineering, 1990
- High-resolution electron-beam induced depositionJournal of Vacuum Science & Technology B, 1988
- Measurement of the profile of finely focused electron beams in a scanning electron microscopeJournal of Physics E: Scientific Instruments, 1984