A Novel Etch-diffusion Process For Fabricating High Aspect Ratio Si Microstructures
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 560-563
- https://doi.org/10.1109/sensor.1995.717286
Abstract
A novel etch-diffusion process is developed for fabricating high aspect ratio Si structures for microsensors. This is accomplished by first dry etching narrow gap Si microstructures using an electron cyclotron resonance (ECR) source, followed by a shallow B diffusion to fully convert the etched microstructures to p++ layer. Microstructures up to 40 /spl mu/m deep with 2 /spl mu/m wide gap were etched with a Cl/sub 2/ plasma generated using the ECR source. Vertical profile and smooth morphology were obtained at low pressure. This is the first demonstration of released high aspect ratio Si microstructures with thicknesses /spl ges/ 20 /spl mu/m.Keywords
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