High-frequency noise performance of SiGe p -channelMODFETs
- 30 March 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (7) , 674-675
- https://doi.org/10.1049/el:20000512
Abstract
No abstract availableKeywords
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n -MODFETs fabricatedon Si/SiGe heterostructuresgrown by UHV-CVDElectronics Letters, 1999
- High-frequency SiGe-n-MODFET for microwave applicationsIEEE Microwave and Guided Wave Letters, 1999
- High performance 0.25 µm p -type Ge/SiGeMODFETsElectronics Letters, 1998
- SiGe HBT technology: a new contender for Si-based RF and microwave circuit applicationsIEEE Transactions on Microwave Theory and Techniques, 1998