As segregation to grain boundaries in Si
- 1 March 1985
- journal article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 50 (3) , 409-423
- https://doi.org/10.1080/01418618408244236
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- An analytical electron microscope study of the kinetics of the Equilibrium Segregation of Bismuth in CopperMetallurgical Transactions A, 1984
- Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in SiliconJournal of the Electrochemical Society, 1983
- An atomistic study of tilt grain boundaries with substitutional impuritiesActa Metallurgica, 1982
- A new method for observing the anisotropy of Bi segregation to Cu grain boundariesScripta Metallurgica, 1981
- Studies of Phosphorus Pile‐Up at the Si ‐ SiO2 Interface Using Auger Sputter ProfilingJournal of the Electrochemical Society, 1981
- Segregation of Arsenic to the Grain Boundaries in Polycrystalline SiliconJournal of the Electrochemical Society, 1980
- Diffusion induced grain boundary migrationScripta Metallurgica, 1979
- A study of grain boundary segregation in Cu-Bi alloys using STEMPhilosophical Magazine A, 1979
- A comparison of X-ray (STEM) and Auger electron spectroscopy for the microanalysis of grain boundary segregationPhilosophical Magazine A, 1978
- Models of grain boundaries in the diamond lattice I. Tilt about I 10Physica, 1959