High-Quality III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 4 references indexed in Scilit:
- High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor depositionJournal of Electronic Materials, 1995
- High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor depositionApplied Physics Letters, 1994
- Novel metalorganic chemical vapor deposition system for GaN growthApplied Physics Letters, 1991
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986