Large diameter semiconductor ring lasers in tensile strained InP/InGaAsP material

This publication has 13 references indexed in Scilit:

• Ga_xIn/sub 1-x/As_yP/sub 1-y/-InP tensile-strained quantum wells for 1.3-μm low-threshold lasers
  IEEE Photonics Technology Letters, 1995
• Deep-oxide curved resonator for low-threshold AlGaAs–GaAs quantum well heterostructure ring lasers
  Applied Physics Letters, 1995
• Efficient semiconductor ring lasers made by a simple self-aligned fabrication process
  IEEE Journal of Selected Topics in Quantum Electronics, 1995
• Well Width Dependence of Threshold Current Density in Tensile-Strained InGaAs/InGaAsP Quantum-Well Lasers
  Japanese Journal of Applied Physics, 1994
• Compact InP-based ring lasers employing multimode interference couplers and combiners
  Applied Physics Letters, 1994
• A 1.54- mu m monolithic semiconductor ring laser: CW and mode-locked operation
  IEEE Photonics Technology Letters, 1992
• Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers
  Electronics Letters, 1992
• Single-frequency continuous-wave operation of ring resonator diode lasers
  Applied Physics Letters, 1991
• CW operation of semiconductor ring lasers
  Electronics Letters, 1990
• Self-imaging in homogeneous planar optical waveguides
  Applied Physics Letters, 1975