Effect of Uniaxial Stress and Doping on the One‐Phonon Raman Spectrum of GaP
- 1 January 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 61 (1) , 207-213
- https://doi.org/10.1002/pssb.2220610116
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effect of Uniaxial Stress on the Raman Spectra of Cubic Crystals: Ca, Ba, and GePhysical Review B, 1973
- Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriersApplied Physics A, 1973
- Second-Order Raman Spectra and Phonon Dispersion in GaPCanadian Journal of Physics, 1973
- Stress-Dependence of the Raman Frequencies and Elastic Constants of Cubic SemiconductorsPhysica Status Solidi (b), 1972
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Energy-Band Structure and Optical Spectrum of Grey TinPhysical Review B, 1970
- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970
- STRESS-DEPENDENT RAMAN FREQUENCY AND LINEWIDTH IN α-QUARTZApplied Physics Letters, 1969
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966