Critical importance of the single-level approximation to account for the highly nonmonotonic dependences of carrier lifetimes on recombination impurity concentration
- 1 April 1997
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 23 (4) , 268-270
- https://doi.org/10.1134/1.1261839
Abstract
This paper is a continuation of an analysis regarding an increase in the lifetimes of nonequilibrium electrons πn and holes πp by several orders of magnitude, observed with increasing concentration of recombination centers. It is shown that a substantial increase in πn and πp may also occur for three charge states of the recombination impurities N, and the curves πn=f(N) and π n=f(N) may each have two minima and maxima.Keywords
This publication has 3 references indexed in Scilit:
- Character of the dependences of non-equilibrium electron and hole lifetimes on the concentration of recombination centres in impurity-type-recombination semiconductorsSolid-State Electronics, 1995
- Solid State PhysicsPublished by Cambridge University Press (CUP) ,1985
- Semiconductor StatisticsPublished by Elsevier ,1962