Optical bistability at the band gap in InAs
- 15 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (4) , 363-365
- https://doi.org/10.1063/1.94777
Abstract
Observation of optical bistability at the band gap in InAs is reported. Clear hysteresis was seen in the reflected signal from a Fabry–Perot etalon consisting of polished n-type InAs with silver deposited on the back surface. By using the 3.096-μm line of an HF laser, which matches the band gap at 77 K, bistable switching was achieved with power levels as low as 3 mW (peak intensity 75 W/cm2).Keywords
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