The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology
- 8 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The frequency dependence of the model parameters of patterned ground shield (PGS) inductors in large part is explained as a consequence of modeling a distributed system with a lumped model. Using an n/sup +/-buried/n-well PGS, the peak Q is improved by /spl sim/25% with small changes of L and C/sub p/. Having a PGS does not significantly improve isolation between inductors.Keywords
This publication has 11 references indexed in Scilit:
- Application of a new circuit design oriented Q extraction technique to inductors in silicon ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Challenges in the design of frequency synthesizers for wireless applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Design issues in CMOS differential LC oscillatorsIEEE Journal of Solid-State Circuits, 1999
- A 1.24-GHz monolithic CMOS VCO with phase noise of -137 dBc/Hz at a 3-MHz offsetIEEE Microwave and Guided Wave Letters, 1999
- On-chip spiral inductors with patterned ground shields for Si-based RF ICsIEEE Journal of Solid-State Circuits, 1998
- Estimation methods for quality factors of inductors fabricated in silicon integrated circuit process technologiesIEEE Journal of Solid-State Circuits, 1998
- The modeling, characterization, and design of monolithic inductors for silicon RF IC'sIEEE Journal of Solid-State Circuits, 1997
- Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technologyIEEE Journal of Solid-State Circuits, 1997
- High-speed VLSI interconnect modeling based on S-parameter measurementsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1993
- Design of Planar Rectangular Microelectronic InductorsIEEE Transactions on Parts, Hybrids, and Packaging, 1974