Direct Comparison of Quantized Hall Resistance between Si-MOSFET and GaAs/AlGaAs Heterostructure Devices on the Same Sample Holder
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A) , L63
- https://doi.org/10.1143/jjap.25.l63
Abstract
A direct comparison of quantized Hall resistance between a Si-MOS and a GaAs device on the same sample holder has been made for the first time. The vertical direction of the GaAs device surface is inclined about 60° in the direction of the supplying magnetic field, making the magnetic field of the GaAs device half that of the Si-MOS on the same sample holder. The sample-independences of quantum Hall effect were experimentally verified with an uncertainty of 3×10-7Keywords
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