The use of saddle-field ion sources for etching semiconductor materials
- 31 December 1980
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 11 (6) , 13-17
- https://doi.org/10.1016/s0026-2692(80)80139-x
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Comparison of the McClure and McIlraith type ion sourcesVacuum, 1979
- 1.14 Energy distribution of the ions produced by saddle field ion sourcesVacuum, 1977
- A saddle field ion source of spherical configuration for etching and thinning applicationsVacuum, 1974
- Design and Operating Characteristics of a Low Pressure Ion SourceJapanese Journal of Applied Physics, 1974
- A double beam ion sourceVacuum, 1973
- Modes of operation of an electrostatic ion gunJournal of Physics D: Applied Physics, 1973
- A Charged Particle OscillatorJournal of Vacuum Science and Technology, 1972
- The performance of the twin wire electrostatic charged particle oscillatorVacuum, 1971
- A new type of ion sourceJournal of Physics D: Applied Physics, 1970
- A Charged Particle OscillatorNature, 1966