Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors
- 5 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (14) , 1094-1096
- https://doi.org/10.1063/1.98751
Abstract
Bias stress measurements on amorphous silicon‐silicon nitride ambipolar thin‐film transistors give clear evidence for the co‐existence of two distinct instability mechanisms: the metastable creation of states in the a‐Si:H layer and charge trapping in the a‐SiN:H layer. The creation of metastable states in the a‐Si:H is found to dominate at low positive bias, while charge trapping in the nitride dominates at larger positive bias and negative bias.Keywords
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