Scanning tunneling microscopy as a tool to study surface roughness of sputtered thin films
- 1 November 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (9) , 4258-4261
- https://doi.org/10.1063/1.343967
Abstract
A three‐dimensional image of the surface roughness of four conducting iron‐oxide Fe3O4 thin films was obtained using a scanning tunneling microscope. We obtain grain size and surface roughness of films deposited on Si(100) by reactive sputtering at different substrate temperatures. The apparent grain size lies between 10 and 50 nm, and depends on the substrate temperature and film thickness. We have also determined the scanning tunneling microscopy parameters (tip size and shape) to obtain ‘‘real’’ images (i.e., images without artifacts) of the films.This publication has 11 references indexed in Scilit:
- STM study of the surface morphology of gold on micaSurface Science, 1988
- Analytical and numerical modeling of columnar evolution in thin filmsJournal of Vacuum Science & Technology A, 1988
- Wear resistance of iron oxide thin filmsJournal of Applied Physics, 1988
- Physical properties of spinel iron oxide thin filmsJournal of Materials Research, 1988
- Scanning tunneling microscope tip structuresJournal of Vacuum Science & Technology A, 1988
- Observation of Atomic Corrugation on Au(111) by Scanning Tunneling MicroscopyPhysical Review Letters, 1987
- HREM, STEM, REM, SEM — and STMSurface Science, 1987
- Scanning tunneling microscopyJournal of Applied Physics, 1987
- Single-tube three-dimensional scanner for scanning tunneling microscopyReview of Scientific Instruments, 1986
- Silver Films Condensed at 300 and 90 K: Scanning Tunneling Microscopy of Their Surface TopographyPhysical Review Letters, 1985