Fabrication of AlAs/Al/AlAs heterostructures by molecular beam epitaxy and migration enhanced epitaxy
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 221-227
- https://doi.org/10.1016/0022-0248(91)90975-b
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxyJournal of Crystal Growth, 1989
- Growth of GaAs-Al-GaAs by migration-enhanced epitaxyApplied Physics Letters, 1988
- Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructuresApplied Physics Letters, 1988
- Epitaxial growth of GaAs/NiAl/GaAs heterostructuresApplied Physics Letters, 1988
- Instabilities in the growth of AlxGa(1−x)As/Al/AlyGa(1−y)As structures by molecular beam epitaxyJournal of Applied Physics, 1982
- Epitaxial relationships between Al, Ag and GaAs{001} surfacesSurface Science, 1982
- Properties of aluminum epitaxial growth on GaAsJournal of Applied Physics, 1981
- Interface behavior and crystallographic relationships of aluminum on GaAs(100) surfacesJournal of Vacuum Science and Technology, 1981
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973