Growth of GaAs-Al-GaAs by migration-enhanced epitaxy
- 26 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2664-2665
- https://doi.org/10.1063/1.100188
Abstract
The GaAs-Al-GaAs structure is grown using migration-enhanced epitaxy (MEE) method at low temperature on a molecular beam epitaxy machine. With MEE the interdiffusion between Al and GaAs is reduced by a large amount, and the morphology is improved by a large degree. Still, Raman spectrum indicates poor crystallinity for the GaAs of the top layer. The effect of different annealing temperatures on the interdiffusion is also studied.Keywords
This publication has 17 references indexed in Scilit:
- Proposed GaAs–Al–GaAs Metal Base TransistorJapanese Journal of Applied Physics, 1984
- Fabrication of GaAs-Mo-Si structures by metalorganic chemical vapor deposition and laser annealingApplied Physics Letters, 1983
- Effects of very low growth rates on GaAs grown by molecular beam epitaxy at low substrate temperaturesApplied Physics Letters, 1983
- On the growth of silver on GaAs{001} surfacesJournal of Crystal Growth, 1982
- Oxygen stabilization of molecular beam epitaxial Al-GaAs Schottky barrier heightsJournal of Applied Physics, 1982
- Instabilities in the growth of AlxGa(1−x)As/Al/AlyGa(1−y)As structures by molecular beam epitaxyJournal of Applied Physics, 1982
- Schottky barrier heights of molecular beam epitaxial metal-AlGaAs structuresApplied Physics Letters, 1981
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- Electron mean free path in a thin metal filmJournal of Applied Physics, 1978
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973