Recalculation of Irvin's resistivity curves for diffused layers in silicon using updated bulk resistivity data
- 1 April 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (4) , 489-493
- https://doi.org/10.1016/0038-1101(93)90257-q
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The relationship between resistivity and dopant density for phosphorus-and boron-doped siliconPublished by National Institute of Standards and Technology (NIST) ,1981
- Resistivity‐Dopant Density Relationship for Boron‐Doped SiliconJournal of the Electrochemical Society, 1980
- Resistivity‐Dopant Density Relationship for Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1980
- Diffusion of Boron from Shallow Ion Implants in SiliconJournal of the Electrochemical Society, 1972
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962