Scanning-DLTS Investigation of the EL 2 Level in Plastically Deformed GaAs
- 16 June 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 77 (2) , K107-K110
- https://doi.org/10.1002/pssa.2210770254
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Formation of antisite defects by gliding dislocations in sphalerite-structure crystalsApplied Physics A, 1982
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- A capacitance meter of high absolute sensitivity suitable for scanning DLTS applicationPhysica Status Solidi (a), 1982
- Arsenic precipitation at dislocations in GaAs substrate materialJournal of Applied Physics, 1980
- A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in a scanning transmission electron microscopeApplied Physics Letters, 1977