A capacitance meter of high absolute sensitivity suitable for scanning DLTS application
- 16 May 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 71 (1) , 159-167
- https://doi.org/10.1002/pssa.2210710119
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Current transient spectroscopy: A high-sensitivity DLTS systemIEEE Transactions on Electron Devices, 1980
- A high sensitivity bridge for the measurement of deep states in semiconductorsJournal of Physics E: Scientific Instruments, 1980
- Constant-capacitance DLTS measurement of defect-density profiles in semiconductorsJournal of Applied Physics, 1979
- Recombination-Enhanced Interactions between Point Defects and Dislocation Climb in SemiconductorsPhysical Review Letters, 1979
- A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in a scanning transmission electron microscopeApplied Physics Letters, 1977
- Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductorsApplied Physics A, 1977
- A correlation method for semiconductor transient signal measurementsJournal of Applied Physics, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970