Recombination-Enhanced Interactions between Point Defects and Dislocation Climb in Semiconductors
- 14 May 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (20) , 1353-1356
- https://doi.org/10.1103/physrevlett.42.1353
Abstract
The interaction between climb-induced dislocation networks and a naturally occurring deep level (the center) in has been analyzed by scanning deeplevel transient spectroscopy. The concentration of centers was observed to decrease markedly in the vicinity of climb-induced networks, but remained nearly unchanged near glide-induced dislocation networks.
Keywords
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