A novel pseudomorphic (GaAs1−xSbx-InyGa1−yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics
- 1 November 1995
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (11) , 1551-1555
- https://doi.org/10.1007/bf02676810
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerfaceJournal of Applied Physics, 1995
- Type-II band alignment in Si/ quantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theoryPhysical Review B, 1994
- Evidence of type-I band offsets in strained /GaAs quantum wells from high-pressure photoluminescencePhysical Review B, 1993
- Valence-band offset in strained GaAs-InxGa1−xAs superlatticesApplied Physics Letters, 1991
- Critical thickness determination of InxGa1-xAs/GaAs strained-layer system by transmission electron microscopyJournal of Electronic Materials, 1991
- Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scatteringApplied Physics Letters, 1990
- MBE growth of pseudomorphic GaAsySb1−y in a GaAs host latticeJournal of Crystal Growth, 1989
- Band lineup in /GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxyPhysical Review B, 1988
- Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxyApplied Physics Letters, 1988