Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 891-894
- https://doi.org/10.1109/iedm.1991.235282
Abstract
A novel simulator for plasma processing has been developed and applied to analyze the gate oxide damage during parallel plate oxygen RIE (reactive ion etching) (13.56 MHz). The TDDB (time-dependent dielectric breakdown) and flat band voltage shift of a poly-silicon gate nMOS capacitor were experimentally measured. The results suggest a new mechanism where a large electron current flow near the wafer edge induces the damage.<>Keywords
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