Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers
- 1 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (1) , 7-9
- https://doi.org/10.1063/1.105529
Abstract
The inclusion of an intracavity saturable absorber for ultrahigh-frequency passive mode locking of semiconductor lasers also produces intensity self-pulsation in many instances. We examined experimentally and theoretically the deleterious effect of self-pulsation on ultrahigh-frequency mode locking, and arrived at the conclusion that lasers with high reflectivity coatings can most reliably achieve mode locking without being adversely affected by self-pulsation.Keywords
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