Diffusion of silicon in Pd2Si during silicide formation
- 1 August 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1173-1177
- https://doi.org/10.1063/1.341880
Abstract
Inert and radioactive markers have been used to study the mechanism of diffusion during Pd2Si formation. With the aid of Ti as an inert marker it has been shown that silicon is the dominant diffusing species during polycrystalline Pd2Si formation. When radioactive silicon is used as a marker it is found that the radioactive silicon is uniformly distributed throughout the Pd2Si after silicide formation. The self‐diffusion of silicon in Pd2Si was investigated and found to be much lower than that necessary to produce a uniform radioactive silicon distribution, had silicon diffused by a grain boundary or pure interstitial mechanism. It is therefore proposed that silicon diffuses by a vacancy mechanism during silicide formation.This publication has 10 references indexed in Scilit:
- Reordering of polycrystalline Pd2Si on epitaxial Pd2SiJournal of Applied Physics, 1988
- Profile of tracer Si in silicide when Si diffuses by vacancy mechanismJournal of Applied Physics, 1985
- An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2SiJournal of Applied Physics, 1985
- A structure marker study for Pd2Si formation: Pd moves in epitaxial Pd2SiJournal of Applied Physics, 1985
- Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on 〈Si〉Journal of Applied Physics, 1983
- Co2Si, CrSi2, ZrSi2 and TiSi2 formation studied by a radioactive 31Si marker techniqueThin Solid Films, 1982
- Metallurgical and electrical properties of chromium silicon interfacesSolid-State Electronics, 1980
- Interactions in the Co/Si thin-film system. II. Diffusion-marker experimentsJournal of Applied Physics, 1978
- Marker studies of silicide formation, silicon self-diffusion and silicon epitaxy using radioactive silicon and Rutherford backscatteringNuclear Instruments and Methods, 1978
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975