Two-dimensional analysis of a merged BiPMOS device
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 8 (8) , 929-932
- https://doi.org/10.1109/43.31554
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Turn-on transient analysis of a BiPMOS devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Delay analysis for BiCMOS driversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Analysis and characterization of BiCMOS for high-speed digital logicIEEE Journal of Solid-State Circuits, 1988
- High-speed BiCMOS technology with a buried twin well structureIEEE Transactions on Electron Devices, 1987
- Optimization and scaling of CMOS-bipolar drivers for VLSI interconnectsIEEE Transactions on Electron Devices, 1986