Site Hopping of Single Chemisorbed Oxygen Molecules on Si(111)-Surfaces
- 23 June 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (25) , 4797-4800
- https://doi.org/10.1103/physrevlett.78.4797
Abstract
We observe directly the site hopping motion of a molecular species on Si(111)- surfaces using a variable-temperature scanning tunneling microscopy. At the temperature range of our observation, the hopping is mainly confined to one-half of the unit cell between adjacent adatom sites. Through Arrhenius plots, the activation energies for the hopping between different atomic sites are derived. We also resolve two short-lived intermediate states which mediate the site hopping. An atomic mechanism is proposed to explain the molecular hopping process.
Keywords
This publication has 33 references indexed in Scilit:
- New Model of the Initial Stages of Si(111)-(77) OxidationPhysical Review Letters, 1996
- Many-Body Nature of the Meyer-Neldel Compensation Law for DiffusionPhysical Review Letters, 1995
- Site Specific and State Selective Photofragmentation of Molecular Oxygen on Si(111)-(7 × 7)Physical Review Letters, 1994
- Real-time observations of vacancy diffusion on Si(001)-(2×1) by scanning tunneling microscopyPhysical Review Letters, 1993
- A theoretical study of the initial stages of Si(111)–7×7 oxidation. I. The molecular precursorThe Journal of Chemical Physics, 1993
- Observation of jump diffusion of isolated sodium atoms on a Cu(001) surface by helium atom scatteringPhysical Review Letters, 1993
- Catalysis on SurfacesScientific American, 1993
- Thermal and photochemical oxidation of Si(111): Doping effect and the reaction mechanismPhysical Review B, 1991
- Successive oxidation stages and annealing behavior of the Si(111) 7×7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Initial stages of oxygen adsorption on Si(111): The stable statePhysical Review B, 1989