Larmor beats and conduction electrongfactors inInxGa1−xAs/GaAsquantum wells

We report conduction electron g factors $g_e$ in strained layer ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ quantum wells from time-resolved Larmor beats in reflection and cw Hanle luminescence depolarization. Samples had well widths from 3 to 20 nm and $x=0.11\mathrm{}\pm \mathrm{0.02.}$ The beat frequency gave $|g_e|$ and nuclear Overhauser shift in the Hanle effect revealed its negative sign. The variation of $g_e$ with well width parallels that in ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ wells, indicating the dominance of nonparabolicity of the bulk conduction band sampled at different electron confinement energies, with important, but weaker, expected effects of strain, quantum-well anisotropy, and barrier penetration.