g-factor and effective mass anisotropies in pseudomorphic strained layers
- 1 July 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (7) , 595-601
- https://doi.org/10.1088/0268-1242/6/7/005
Abstract
The authors present an evaluation for the calculation of the effective g-factor and the effective mass of conduction band electrons in pseudomorphic strained layers. They apply this evaluation to some important heterostructure systems and show that effective mass is mainly isotropically shifted whereas the g-factor exhibits anisotropic splitting. They show that these effects, being attributed to the internal strains induced by lattice mismatch, may be used to characterize heterostructures.Keywords
This publication has 19 references indexed in Scilit:
- I n s i t u measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substratesApplied Physics Letters, 1989
- Critical layer thickness in strained Ga1−xInxAs/InP quantum wellsApplied Physics Letters, 1989
- Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopyApplied Physics Letters, 1989
- Electron-spin resonance in the two-dimensional electron gas of GaAs-As heterostructuresPhysical Review B, 1988
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunctionPhysical Review B, 1985
- Optically detected magnetic resonance (O.D.M.R.) investigations of recombination processes in semiconductorsAdvances in Physics, 1981
- Cyclotron resonance from photoexcited electrons in ZnTePhysical Review B, 1979
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968