Effect of Stress on Electron Relaxation Times in n-Type Silicon
- 1 February 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (2) , 865-867
- https://doi.org/10.1063/1.1660107
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966
- Anisotropic phonon scattering of electrons in germanium and siliconPhysics Letters, 1964
- Piezoresistance and Piezo-Hall-Effect in-Type SiliconPhysical Review B, 1963
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955