Flatband voltage shift of amorphous silicon nitride metal-insulator-semiconductor diodes
- 15 August 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (4) , 2452-2454
- https://doi.org/10.1063/1.349397
Abstract
The relation between the flatband voltage shift of amorphous silicon nitride metal‐insulator‐semiconductor (a‐SiN:H MIS) diodes and a‐SiN:H deposition conditions is investigated. Significant hysteresis loops are observed in the capacitance‐voltage (C‐V) characteristics for some MIS diodes. This means that the bias scanning sequence and the a‐SiN:H deposition conditions affect the flatband voltage. The dependence of the flatband voltage on bias stress time is also studied in connection with the deposition conditions. A logarithmic time dependence of the flatband voltage is seen for MIS diodes for which a‐SiN:H was deposited at a high NH3/SiH4 gas ratio. These effects are induced from Si‐dangling bonds which exist in a‐SiN:H films.This publication has 12 references indexed in Scilit:
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