Lateral motion of terrace width distributions during step-flow growth
- 10 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (6) , 645-647
- https://doi.org/10.1063/1.107809
Abstract
We have observed two phenomena that occur during (Al,Ga)Sb lateral superlattice (LSL) growth which have implications on our understanding of adatom/step edge interactions on vicinal surfaces: shifts of the lateral distribution of terrace widths in the direction of step propagation, and lateral variations in the superlattice tilt angle that are correlated with the terrace width distribution. Both phenomena can be explained with a model of step-flow growth that includes both asymmetric adatom attachment at step edges and anisotropic adatom crossing over multiple step edges. A comparison between numerical simulations of this model and experimentally observed (Al,Ga)Sb LSL terrace width distributions leads to quantitative estimates of adatom migration characteristics. We find that at least one type of adatom, probably Ga, has a migration length equivalent to several terrace widths, and moves up and down step edges nearly isotropically. This method of determining adatom migration characteristics can be extended to any material that LSL layers can be grown above and below as terrace width markers.Keywords
This publication has 8 references indexed in Scilit:
- The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wellsJournal of Crystal Growth, 1991
- Step-flow growth on strained surfaces: (Al,Ga)Sb tilted superlatticesApplied Physics Letters, 1990
- Evolution of terrace size distributions during thin-film growth by step-mediated epitaxyJournal of Applied Physics, 1990
- Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrateJournal of Crystal Growth, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor depositionJournal of Vacuum Science & Technology B, 1988
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984
- Step Motion on Crystal Surfaces. IIJournal of Applied Physics, 1969