Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (11) , 934-935
- https://doi.org/10.1063/1.90223
Abstract
Negative‐electron‐affinity (NEA) photocathodes are made possible by adding Cs and oxygen to the surface of Si or GaAs and other III‐V materials. In this work, the chemistry of the Cs‐O adlayer on GaAs is studied by following the Cs, Ga, and As core‐level shifts at hν=120 eV. The changes in binding energy for the Cs core levels were studied as a function of oxygen exposure. Oxygen was found to bind to As of GaAs for exposures above 10 L. These results are discussed in terms of the importance of Cs suboxides, in relation to the interfacial barriers which limit the ultimate photothreshold of NEA cathodes.Keywords
This publication has 11 references indexed in Scilit:
- The theory of the workfunction of caesium suboxides and caesium filmsJournal of Physics C: Solid State Physics, 1978
- Negative affinity 3–5 photocathodes: Their physics and technologyApplied Physics A, 1977
- Photoemission from Metallic Cesium Oxide FilmsPhysical Review Letters, 1976
- Oxidation Properties of GaAs (110) SurfacesPhysical Review Letters, 1976
- LEED, auger electron spectroscopy (AES) and photoemission studies of the adsorption of cesium on the epitaxially grown GaAs(110) surfaceSurface Science, 1976
- Synchrotron radiation as a new tool within photon-beam technologyJournal of Vacuum Science and Technology, 1975
- The oxidation of Cs—uv photoemission studiesJournal of Applied Physics, 1975
- LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and OSurface Science, 1975
- Optimization of the InAsxP1−x–Cs2O PhotocathodeJournal of Applied Physics, 1971
- LONG-WAVELENGTH THRESHOLD OF Cs2O-COATED PHOTOEMITTERSApplied Physics Letters, 1970