Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers

This publication has 7 references indexed in Scilit:

• Novel principle of confinement in quantum-well structures
  Electronics Letters, 1992
• Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure
  Applied Physics Letters, 1991
• Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers
  Electronics Letters, 1991
• Low threshold 1.5 μm tensile-strained single quantum well lasers
  Electronics Letters, 1991
• Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained-layer multiquantum well lasers
  Applied Physics Letters, 1991
• Type-I to type-II superlattice transition in strained layers of ${\mathrm{In}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As grown on InP
  Physical Review Letters, 1988
• Hole subbands in strained GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As quantum wells: Exact solution of the effective-mass equation
  Physical Review B, 1987