Unified bulk mobility model for low- and high-field transport in silicon

This publication has 40 references indexed in Scilit:

• A unified mobility model for device simulation—I. Model equations and concentration dependence
  Solid-State Electronics, 1992
• Effect of the electron-plasmon interaction on the electron mobility in silicon
  Physical Review B, 1991
• Spatially Variable Drift Mobility Model for Hg1−xCdxTe Diodes I. Analytical Base and Fit to Hall Data
  Physica Status Solidi (a), 1990
• The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
  Reviews of Modern Physics, 1983
• Effective mass and intrinsic concentration in silicon
  Solid-State Electronics, 1967
• Hot-carrier d.c. conduction in elemental semiconductors
  Solid-State Electronics, 1967
• Diffusion of Hot and Cold Electrons in Semiconductor Barriers
  Physical Review B, 1962
• Distribution Functions for Hot Electrons in Many-Valley Semiconductors
  Physical Review B, 1961
• Millimeter Cyclotron Resonance in Silicon
  Physical Review Letters, 1960
• The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductors
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957