Hot-carrier d.c. conduction in elemental semiconductors
- 31 May 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (5) , 385-400
- https://doi.org/10.1016/0038-1101(67)90038-x
Abstract
No abstract availableKeywords
This publication has 44 references indexed in Scilit:
- DRIFT VELOCITY OF HOT ELECTRONS IN n-TYPE GERMANIUMCanadian Journal of Physics, 1962
- “The Non-Linear Behavior of High Power Centimeterwave Absorption by Carriers in n-Germanium and Silicon Crystals”Journal of the Physics Society Japan, 1962
- A study of energy-loss processes in germanium at high electric fields using microwave techniquesJournal of Physics and Chemistry of Solids, 1961
- Effect of High Pressure on Some Hot Electron Phenomena in-Type GermaniumPhysical Review B, 1960
- Mobility in high-resistivity germanium at high d.c. electric fieldsJournal of Physics and Chemistry of Solids, 1960
- The field-dependence of carrier mobility in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- The mobility of electrons heated by microwave fields in n-type germaniumJournal of Physics and Chemistry of Solids, 1959
- High Electric Field Effects in-Indium AntimonidePhysical Review B, 1958
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953
- Mobilities of Electrons in High Electric FieldsPhysical Review B, 1951