Crystallization of Polysilane in Binary Si:H Alloys

Abstract
Binary Si:H alloys containing a number of polysilane (SiH2)n groups have been produced by plasma chemical-vapor deposition of disilane. High-resolution electron micrographs of these alloys clearly show a number of lattice fringes, indicating that the polysilane groups are crystallized. The extended x-ray-absorption fine structures as well as the electron-diffraction patterns show that the Si atoms in the polysilane crystals occupy the same lattice points as those of tetrahedrally bonded silicon crystal.