Local interface composition and band discontinuities in heterovalent heterostructures
- 10 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (2) , 294-297
- https://doi.org/10.1103/physrevlett.72.294
Abstract
The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.Keywords
This publication has 25 references indexed in Scilit:
- Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructuresPhysical Review Letters, 1992
- Engineering ZnSe-GaAs band offsetsJournal of Crystal Growth, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Bandgap and Interface Engineering for Advanced Electronic and Photonic DevicesMRS Bulletin, 1991
- Stability and band offsets of heterovalent superlattices: Si/GaP, Ge/GaAs, and Si/GaAsPhysical Review B, 1990
- Facing targets sputtering system for depositing Co–Cr perpendicular magnetic recording mediaJournal of Vacuum Science & Technology A, 1987
- Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxyApplied Physics Letters, 1985
- Atomic structure and properties of polar Ge-GaAs(100) interfacesPhysical Review B, 1981
- Theory of polar semiconductor surfacesJournal of Vacuum Science and Technology, 1979