25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode.
Open Access
- 7 January 2010
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 18 (2) , 1070-1075
- https://doi.org/10.1364/oe.18.001070
Abstract
We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.Keywords
This publication has 9 references indexed in Scilit:
- High speed hybrid silicon evanescent Mach-Zehnder modulator and switchOptics Express, 2008
- A Hybrid Silicon–AlGaInAs Phase ModulatorIEEE Photonics Technology Letters, 2008
- Waveguide-integrated, ultralow-energy GeSi electro-absorption modulatorsNature Photonics, 2008
- InP-Based Mach–Zehnder Modulator With Capacitively Loaded Traveling-Wave ElectrodesJournal of Lightwave Technology, 2008
- High-speed optical modulation based on carrier depletion in a silicon waveguideOptics Express, 2007
- 125 Gbit/s carrier-injection-based silicon micro-ring silicon modulatorsOptics Express, 2007
- A hybrid AlGaInAs-silicon evanescent preamplifier and photodetectorOptics Express, 2007
- Novel T-rail electrodes for substrate removed low-voltage high-speed GaAs/AlGaAs electrooptic modulatorsIEEE Transactions on Microwave Theory and Techniques, 2005
- Narrow gap coplanar slow wave electrode for travellingwaveelectro-optic modulatorsElectronics Letters, 1995